A 32 x 32 ISFET Chemical Sensing Array With Integrated Trapped Charge and Gain Compensation

摘要

This paper presents a CMOS-based 32 × 32 ion-sensitive field-effect transistor (ISFET) system-on-chip for real-time ion imaging. Fabricated in an unmodified 0.35-μm CMOS technology, the ISFET sensor array is based on a pixel topology, which uses capacitive feedback to improve signal attenuation due to passivation capacitance and a low-leakage floatinggate reset followed by a digital correlated double sampling to robustly remove unwanted trapped charge-induced dc offset. An automatic gain calibration (AGC) is used to perform realtime calibration and guarantee all sensors that have the same gain with a 99% accuracy, and combining all these mechanisms guarantees an average pixel voltage variation of 14.3 mV after gain is applied when measured over multiple dies. The full array is experimentally shown to be capable of real-time ion imaging of pH, with an intrinsic sensitivity of 39.6mV/pH and a scan rate of 9.3 frames/s when running the AGC, with a total power consumption of 10.2 mW.